Demonstration of a method to fabricate a large-area diamond single crystalPOSTHILL, J. B; MALTA, D. P; HUDSON, G. C et al.Thin solid films. 1995, Vol 271, Num 1-2, pp 39-49, issn 0040-6090Article

Numerical study of gasdynamics influence on three-dimensional transport phenomena in vertical zinc selenide LPCVD reactorGARIBIN, E. A; MIRONOV, I. A; KHORUZHNIKOV, S. E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 39, Num 1, pp 8-14, issn 0921-5107Article

3D simulation of tungsten low pressure-chemical vapor deposition in contact holesBÄR, E; LORENZ, J.Applied surface science. 1995, Vol 91, pp 321-325, issn 0169-4332Conference Paper

Time-dependent dielectric breakdown measurements on RPECVD and thermal oxidesSILVESTRE, C; HAUSER, J. R.Thin solid films. 1996, Vol 277, Num 1-2, pp 101-114, issn 0040-6090Article

Piezoelectricity in aromatic polyamide thin films prepared by vapor deposition polymerizationLINFORD, M. R; IIJIMA, M; HATTORI, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 2A, pp 677-678, issn 0021-4922, 1Article

Preparation of micro-coiled TiC fibers by metal impurity-activated chemical vapor depositionMOTOJIMA, S; IWANAGA, H.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 159-163, issn 0921-5107Article

Mise au point d'un système d'analyse in situ par spectrométrie de masse de la phase gazeuse pour le dépôt chimique en phase vapeur = On site gas mass spectrometer set-up for CVD reactorTHOMAS, N; BLANQUET, E.Le Vide (1995). 1995, Vol 51, Num 278, issn 1266-0167, 367, 393-408 [17 p.]Article

Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor depositionCHANG, T.-C; YEH, W.-K; CHANG, C.-Y et al.Materials chemistry and physics. 1996, Vol 44, Num 1, pp 95-99, issn 0254-0584Article

Towards closed-loop control of CVD coating microstructureGEVELDER, M; TOLEDO-QUINONES, M; BUFANO, M et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1996, Vol 209, Num 1-2, pp 377-383, issn 0921-5093Conference Paper

Growth rate modeling for selective tungsten LPCVDWOLF, H; STREITER, R; SCHULZ, S. E et al.Applied surface science. 1995, Vol 91, pp 332-338, issn 0169-4332Conference Paper

Design and fabrication of a double bandstop rugate filter grown by plasma-enhanced chemical vapor depositionLIM, S; SHIH, S; WAGER, J. F et al.Thin solid films. 1996, Vol 277, Num 1-2, pp 144-146, issn 0040-6090Article

Measurements of specific heat and mass density in CVD diamondGRAEBNER, J. E.Diamond and related materials. 1996, Vol 5, Num 11, pp 1366-1370, issn 0925-9635Article

Advances and development in CVD technologyHINTERMANN, H. E.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1996, Vol 209, Num 1-2, pp 366-371, issn 0921-5093Conference Paper

Study of color centers in hot-filament CVD diamond films by cathodoluminescence and photoluminescence and their correlations with film qualityLIN, L.-T. S; POPOVICI, G; MORI, Y et al.Diamond and related materials. 1996, Vol 5, Num 11, pp 1236-1245, issn 0925-9635Article

Effect of rapid thermal annealing on the optical and structural properties of highly strained InAs/InP quantum well structuresXING, Q. J; BREBNER, J. L; LUO, X. M et al.Solid state communications. 1996, Vol 98, Num 11, pp 1009-1014, issn 0038-1098, 5 p.Article

Influence of mixed reductants on the growth rate of WF₆-based W-CVDJONGSTE, J. F; OOSTERLAKEN, T. G. M; LEUSINK, G. J et al.Applied surface science. 1995, Vol 91, pp 162-168, issn 0169-4332Conference Paper

Wide web coating of complex materialsLIEVENS, H.Surface & coatings technology. 1995, Vol 76-77, Num 1-3, pp 744-753, issn 0257-8972, 2Conference Paper

Pulsed microwave plasma-assisted chemical vapour deposition of diamondLAIMER, J; MATSUMOTO, S.International journal of refractory metals & hard materials. 1996, Vol 14, Num 1-3, pp 179-184, issn 0958-0611Article

UHV/CVD Ge/Si(100) heteroepitaxy monitored by in situ ellipsometryLARCIPRETE, R; COZZI, S; MASETTI, E et al.Applied surface science. 1996, Vol 102, pp 52-56, issn 0169-4332Conference Paper

Deposition of mixed metal oxides by MOCVD and PECVDCAO, Z; OWEN, J. R.Thin solid films. 1995, Vol 271, Num 1-2, pp 69-72, issn 0040-6090Article

Precursor development for the chemical vapor deposition of aluminium, copper and palladiumGRÄFE, A; HEINEN, R; KLEIN, F et al.Applied surface science. 1995, Vol 91, pp 187-191, issn 0169-4332Conference Paper

Very low temperature polycrystalline silicon films with very large grains deposited for thin film transistor applicationsWANG, K. C; YEW, T. R; HWANG, H. L et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 99-105, issn 0169-4332Conference Paper

The modelling routes for the chemical vapour deposition process : application to Si_1-xGe_x depositionPONS, M; BERNARD, C; ROUCH, H et al.Applied surface science. 1995, Vol 91, pp 34-43, issn 0169-4332Conference Paper

Ferromagnetism of pyrolytic carbon under low-temperature growth by the CVD methodKAWABATA, K; MIZUTANI, M; FUKUDA, M et al.Synthetic metals. 1989, Vol 33, Num 3, pp 399-402, issn 0379-6779Article

Microstructure and properties of Ti-Si-N films prepared by plasma-enhanced chemical vapor depositionHE, J. L; CHEN, C. K; HON, M. H et al.Materials chemistry and physics. 1996, Vol 44, Num 1, pp 9-16, issn 0254-0584Article